 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENA0324 2SK4065 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4065 Features * * * General-Purpose Switching Device Applications Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 75 20 100 400 1.65 90 150 --55 to +150 735 70 Unit V V A A W W C C mJ A Note : *1 VDD=30V, L=200H, IAV=70A *2 L200H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=75V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V ID=50A, VGS=4V Ratings min 75 1 10 1.2 47 78 4.6 5.7 6.0 8.0 2.6 typ max Unit V A A V S m m Marking : K4065 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 41006QA MS IM TB-00002239 No. A0324-1/5 2SK4065 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=35V, VGS=10V, ID=100A VDS=35V, VGS=10V, ID=100A VDS=35V, VGS=10V, ID=100A IS=100A, VGS=0V Ratings min typ 12200 950 730 80 460 930 640 220 40 50 0.9 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 7513-002 10.2 4.5 Package Dimensions unit : mm 7001-003 10.2 4.5 1.3 0.2 11.5 8.8 9.9 0.2 1.3 1.5MAX 1.6 8.8 20.9 1.2 3.0 1 0.8 2 3 1.2 0 to 0.3 0.4 (9.4) 11.0 0.8 0.4 2.55 2.55 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.7 1.35 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2.55 2.55 SANYO : SMP Switching Time Test Circuit VIN 10V 0V VIN ID=50A RL=0.7 VDD=35V Avalanche Resistance Test Circuit L 50 D PW=10s D.C.1% VOUT 2SK4065 10V 0V 1.4 G 50 VDD 2SK4065 P.G 50 S No. A0324-2/5 2SK4065 200 180 160 ID -- VDS V 8V Tc= --2 5C 75 C 10 6V 180 160 Drain Current, ID -- A Drain Current, ID -- A 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 140 120 100 80 VGS=3V C 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25 --25C C Tc= 75 3.5 4.0 25 C 4.5 IT10699 150 IT10701 1.4 IT10703 30 IT10756 Tc=25C Single pulse 200 ID -- VGS VDS=10V Single pulse Drain-to-Source Voltage, VDS -- V 30 IT10698 14 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=50A Single pulse Single pulse 12 25 10 20 8 15 6 50 I D= I D= A =4V V GS , 10 5 Tc=75C 25C 4 10 S= A, VG 50 V 2 0 --50 --25C 0 0 1 2 3 4 5 6 7 8 9 10 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V 2 yfs -- ID IT10700 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 Case Temperature, Tc -- C IS -- VSD VGS=0V Single pulse Forward Transfer Admittance, yfs -- S 100 7 5 3 2 VDS=10V Single pulse C 25 = Tc 10 7 5 3 2 1.0 0.1 --2 C 5 75 C Source Current, IS -- A C 0 0.2 0.1 7 5 3 2 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 3 2 5 7 100 IT10702 3 Tc=7 5 0.4 0.6 --25C 0.8 25C 1.0 1.2 Diode Forward Voltage, VSD -- V SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Ciss VDD=35V VGS=10V Ciss, Coss, Crss -- pF 2 Switching Time, SW Time -- ns 10k 7 5 3 2 1000 7 5 3 2 tf Coss 1k 7 5 3 tr 100 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT10704 td(on) Crss 0 5 10 15 20 25 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A0324-3/5 2SK4065 10 9 VGS -- Qg VDS=35V ID=100A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 50 100 150 200 250 IT10705 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=400A ID=100A 10 s 1 ms DC 00m op s era tio n 10s 1m 10 10 0 s s Operation in this area is limited by RDS(on). 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 5 7 100 2 IT10881 PD -- Tc Allowable Power Dissipation, PD -- W 1.65 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 140 160 Ambient Temperature, Ta -- C 120 IT10707 Case Temperature, Tc -- C IT10708 EAS -- Ta Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10709 Ambient Temperature, Ta -- C No. A0324-4/5 2SK4065 Note on usage : Since the 2SK4065 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No. A0324-5/5 |
Price & Availability of 2SK4065
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |